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ethesys.library.ttu.edu.tw 檢索結果共 5252 筆,本頁資料從第 121 筆到第 132 筆

鎂合金因具有良好加工性、吸震性、導電性、導熱性、電磁屏障等特性,目前已廣泛應用生活各領域上。然而,鎂本身化學活潑性高,在一般環境下便極易腐蝕,此缺陷大幅地限制了鎂及其合金應,因此,如何使鎂合金的耐蝕性增加便成了研究發展的方向。其中,微弧氧化為一種改善鎂合金表面耐蝕性的表面處理技術,利用在鎂合金表面生成一層陶瓷氧化膜層,減緩其受腐蝕的速率。然而,其陶瓷氧化層表面仍存在細微孔洞,易使水氣或其他腐蝕環境進入孔隙中。與此同時,因陶瓷氧化膜層的表面具親水性,故利用含有植物油與動物油混和的油酸及硬脂酸或含有氟鍵結的鐵氟龍溶液進行疏水化處理,對微弧氧化層的孔隙進行填補及改善表面的親水性質。 本實驗利用微弧氧化法,探討對LZ91鎂鋰合金進行微弧氧化之添加電解液成分對其成膜之性質影響,並利用田口方法找出顯著因子。進一步控制微弧氧化時間改變膜層厚度及孔隙....

By 吳浩宇-材料工程學系(所)-大同大學-碩士-2015-08-31
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The purpose of this paper is to study the use of secondary SiNx mask with double antireflective film in combination with a low-cost self-assembled nano ball technology, the nano-spheres coated with a multilayer antireflection film of rough suede on the surface of the pyramid structure, forming a rough surface having a second wavelength anti-reflective layer to improve t....

By 王嘉瑋-光電工程研究所-大同大學-碩士-2015-08-28
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This dissertation is devoted to CuGaSe2 and GaSe thin films grown using molecular beam epitaxy. For CuGaSe2 thin films, the growth and physical properties were studied. CuGaSe2 were obtained with varying metallic ratio of (Cu/Cu+Ga) from 0.23 to 0.75. When the metallic ratio increases from 0.23 to 0.75, surface morphology of CuGaSe2 thin films implies the transformation....

By 吳家興-光電工程研究所-大同大學-博士-2015-08-27
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In this study, transparent conductive oxide compound semiconductors, such as: InGaZnO(IGZO), ZnSnO(ZTO), and CuZnSnO(CZTO), were investigated and fabricated by using plasma-assisted molecular beam epitaxy. The content of gallium into IGZO thin films was adjusted to evaluate fundamental properties of IGZO. With Ga composition ratio higher than 27.9%, a phase transformati....

By 黃士榮-光電工程研究所-大同大學-博士-2015-08-27
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The main purpose of this paper is to develop a long-term to maintain the zinc oxide semiconductor thin films of P-type conductivity. Using DC sputtering system to depositing zinc nitride film, and rapid thermal annealing during oxidation, in the manner of doing precursor oxide doped. This paper discusses the process at different pressures, zinc nitride film structures i....

By 劉柏璋-光電工程研究所-大同大學-碩士-2015-08-27
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In this work, the fabrication of SnSex and (001)-oriented SnSe2 thin films on c-sapphire by molecular beam epitaxy (MBE) was studied. The growth processes were monitored by in situ reflection high energy electron diffraction (RHEED). Streaky RHEED patterns of SnSe2 show the films were flat. The lattice constant of a-axis was approximately 3.71 0.1Å, which is consiste....

By 何豐州-光電工程研究所-大同大學-碩士-2015-08-27
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In this study, high-conductivity GaSe:Zn thin films grown on a c-sapphire substrate are achieved using molecular beam epitaxy (MBE). The thin films are monitored by reflection high energy electron diffraction (RHEED). The streaky RHEED patterns which imply the growing thin film has high crystal quality along the [0001] azimuth are observed after 5 minutes since start gr....

By 王彥其-光電工程研究所-大同大學-碩士-2015-08-27
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Automatic image cropping can be used to segment the main theme of an image on different platforms such as mobile phones, cameras, and web pages. For the same input image the results are different in various systems with the same function. Some of the results may even be completely different. However, we should not say the result is wrong because it involves personal sen....

By 陳東承-資訊工程學系(所)-大同大學-碩士-2015-08-27
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摘要 由於高血糖是造成慢性心血管疾病的主因,而內皮細胞通常參與主要作用,近年來也有文獻指出番石榴是具有抗氧化,抗發炎的生物活性.葉片中的謝皮素對於促進肝細胞對葡萄糖的攝取,有助於減輕糖尿病低血糖的結果.番石榴萃取物對第二型糖尿病患者具有降血糖作用及保健功效。番石榴(Psidium guajava)為桃金孃科,又名為那拔、拔仔,為熱帶、亞熱帶水果,原產美洲。本研究係以宜蘭縣員山鄉所產之原生種紅心番石榴葉葉片作為材料,以超臨界二氧化碳萃取技術分別萃取紅心番石榴之三種葉片,分別是大葉、嫩葉、葉芯三種萃取物,所得到檞皮素含量分別為每100克大葉所含46 mg,嫩葉所含100 mg.葉芯所含500 mg,利用三種誘導劑葡萄糖、乙二醛、甲基乙二醛誘導人類擠靜脈內皮細胞模擬高血糖情況進行MTT細胞活性實驗。將收集的萃取物溶於乙醇做稀釋,分別為抑制藥....

By 陳念瑄-生物工程學系(所)-大同大學-碩士-2015-08-27
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在2002年,行政院經建會積極推動 『挑戰2008:國家重點發展計畫』 ,持續發展台灣製造實力與優勢並加強創新設計能力;經濟部擬定『兩兆雙星產業發展計畫』勾勒出我國核心與新興產業政策方向,加速產業發展並提升國際競爭力。在此政策下,一部分傳統產業因為技術落後、生產成本提高及市場競爭下,為求生存紛紛外移,導致很多原本領先全球的產業被取代或消失。以兒童推車產業為例,台灣原為全球的領先者,但是因為政府的政策改變、全球化的趨勢再加上少子化,在台灣幾乎快消失了,只剩產品開發及訂單處理的這類組織留下。而如何讓此傳統產業的技術繼續留在台灣並延續下去,正是此次研究3D列印技術導入企業輔助設計開發的目的。 3D列印的技術在1980年便開始萌芽。在本人任職的母公司,早於2001年即開始引進3D列印的技術來協助產品的設計開發。 本研究呈現兒童推車產品導入3D....

By 陳契源-工業設計學系(所)-大同大學-碩士-2015-08-27
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The stoichiometric NiO is an insulator, but the electric and optical properties of NiO were changed by effect of ionic nickel defect or oxygen interstitial. In this study, nickel defective and oxygen interstitial of NiO thin film were discussed from different properties of NiO thin films, which was fabricated by NiO target with conditions of various RF power, substrate ....

By 劉永強-光電工程研究所-大同大學-碩士-2015-08-27
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在硒化銅銦鎵中,利用前驅物來進行三階段製程的方式,已經行之有年,為了能夠得到更好品質與效率的硒化銅鋅錫薄膜,參考了硒化銅銦鎵的三階段製程方式後,設計出二元與三元化合物交替成長法來進行實驗。 在二元堆疊法中,我們將討論不同堆疊順序對硒化銅鋅錫磊晶的影響,由實驗可以知道當堆疊順序為硒化鋅/硒化錫/硒化銅/鉬玻璃,能產生物性較好的硒化銅鋅錫薄膜,拉曼光譜可以清楚地觀察到 171、192、231、245 cm-1 這四個硒化銅鋅錫的峰值。另外利用三元堆疊法中,對堆疊時間比的差異和二次相的改善進行探討。在堆疊時間硒化銅鋅(CZS)與硒化銅錫(CTS)比值≦1的樣品組中,由拉曼光譜圖得知隨著堆疊時間比例的不同,能控制硒化銅鋅錫的化學組成比。隨著CZS的堆疊時間比例上升,組成比由原本的硒化銅錫慢慢轉變成硒化銅鋅錫;另外也成功利用基板溫度的調變,成功....

By 林威良-光電工程研究所-大同大學-碩士-2015-08-27
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