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N?????????P-N??????

The Investigation of P-N Junction for N-Type FinFETs

作者:???
畢業學校:國立高雄大學
出版單位:國立高雄大學
核准日期:2015-10-26
類型:Electronic Thesis or Dissertation
權限:Copyright information available at source archive--National University of Kaohsiung....

中文摘要

????????????????????????????????????????????N???????????????????????????????????P-N?????????P-N?????????????????IB???????????????????????????IB???????????????N???????????P-N?????????????????????????P-N????????????????????????P-N??????????????????????????????????????????????????????????????1??????P-N???????????????

英文摘要

FinFET has considered as one of the most promising options for future devices to replace planner MOSFETs. The N-type Tri-Gate FinFETs were studied in this work. The characteristics of P-N junction of FinFET devices with different channel lengths and Fin numbers were investigated. It is found that average junction current (IB) will decrease with fin number increasing. On the other hand, the junction current variation increased with channel length increasing as the fin number was fixed. The reliability of N-type FinFETs were then studied with hot carrier stress. It is observed that the variation of forward bias current increased with fin number increasing. Besides, the larger reverse leakage current would be observed with the larger reverse bias and more fin numbers. On the contrite When Fin number is 1 P-N junction can well control reverse bias current leakage from body. In contrast, good controllability of reverse leakage current could be found when fin number is 1.


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